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ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Yıl 2004, Cilt: 17 Sayı: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar Bora Alkan

Öz

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

 Key Words: Hall mobility, dislocation scattering, Kubo formula

 

Anahtar Kelimeler

Hall mobility dislocation scattering Kubo formula

Yıl 2004, Cilt: 17 Sayı: 1, 31 - 35, 11.08.2010

Mehmet Kasap Selim Acar Bora Alkan

Öz

Toplam 0 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Physics
Yazarlar

Mehmet Kasap Bu kişi benim

Selim Acar

Bora Alkan Bu kişi benim

Yayımlanma Tarihi 11 Ağustos 2010
Yayımlandığı Sayı Yıl 2004 Cilt: 17 Sayı: 1

Kaynak Göster

APA Kasap, M., Acar, S., & Alkan, B. (2010). ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science, 17(1), 31-35.
AMA Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. Ağustos 2010;17(1):31-35.
Chicago Kasap, Mehmet, Selim Acar, ve Bora Alkan. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17, sy. 1 (Ağustos 2010): 31-35.
EndNote Kasap M, Acar S, Alkan B (01 Ağustos 2010) ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science 17 1 31–35.
IEEE M. Kasap, S. Acar, ve B. Alkan, “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”, Gazi University Journal of Science, c. 17, sy. 1, ss. 31–35, 2010.
ISNAD Kasap, Mehmet vd. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science 17/1 (Ağustos 2010), 31-35.
JAMA Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17:31–35.
MLA Kasap, Mehmet vd. “ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING”. Gazi University Journal of Science, c. 17, sy. 1, 2010, ss. 31-35.
Vancouver Kasap M, Acar S, Alkan B. ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING. Gazi University Journal of Science. 2010;17(1):31-5.