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TVA ile üretilen Cam / GaN / InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri

Yıl 2020, Cilt: 13 Sayı: 1, 1 - 10, 20.03.2020
https://doi.org/10.18185/erzifbed.541448

Öz

Bu çalışmada, GaN / InGaN yarı iletken filmler,
termiyonik vakum ark (TVA) yöntemi kullanılarak cam alttaş üzerine büyütüldü.
Üretilen filmlerin bazı fiziksel özelliklerini iyileştirmek için, farklı
sıcaklıklarda termal tavlama yapıldı ve tavlama sıcaklığının, filmlerin optik
ve yüzey özellikleri üzerindeki etkisi araştırıldı. UV-VIS spektrofotometresi
kullanılarak geçirgenlik ve soğurma spektrumları alınmış ve optik enerji bant
aralıkları belirlenmiştir. Filmlerin yüzey görüntüleri ve yüzey pürüzlülük değerleri,
atomik kuvvet mikroskopisi (AFM) kullanılarak elde edildi. Elde edilen
sonuçlara göre, GaN / InGaN filmlerin bazı fiziksel özellikleri termal tavlama
ile iyileştirilmiş ve bu filmler çeşitli teknolojik alanlarda kullanım için
araştırılmıştır.

Kaynakça

  • Ambacher O. 1998. Growth and applications of group III-nitrides, Journal of Physics D:Applied Physics, 31 (20), 2653-2710.
  • Chambouleyron I., Martínez J. M. 2002. Optical properties of dielectric and semiconductor thin films, In Handbook of Thin Films, 3, 593-622.
  • Chaudhari G. N., Chinchamalatpure V. R., Ghosh S. A. 2011. Structural and electrical characterization of GaN thin films on Si (100), American Journal of Analytical Chemistry, 2 (08), 984.
  • Edward T. Y. 2002. III-V nitride semiconductors: Applications and devices, CRC Press, 16
  • Erdoğan E., Kundakçı M. 2019a. Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method, Microelectronic Engineering, 207, 15-18.
  • Erdoğan E., Kundakçı M. 2019b. Changes of the Physical Properties of Sputtered InGaN Thin Films Under Small Nitrogen Gas Flow Variations, Journal of Electronic Materials, 1-8. (https://doi.org/10.1007/s11664-019-07042-8)
  • Erdoğan E., Kundakçı M. 2019c. Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA), SN Applied Sciences, 1 (1), 1-9
  • Erdoğan E., Kundakci M. Mantarci A. 2016. InGaN thin film deposition on Si (100) and glass substrates by termionic vacuum arc, Journal of Physiscs: Conference Series, 707, 012019.
  • Feng S. W., Tang T. Y., Lu Y. C., Liu S. J., Lin E. C., Yang C. C., Lin J. Y. 2004. Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing, Journal of Applied Physics, 95 (10), 5388-5396.
  • Feng S. W., Lin E. C., Tang T. Y., Cheng Y. C., Wang H. C., Yang C. C., Lin J. Y. 2003. Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31, Applied Physics Letters, 83 (19), 3906-3908.
  • Jain S. C., Willander M., Narayan J., Overstraeten R. V. 2000. III–nitrides: Growth, characterization, and properties, Journal of Applied Physics, 87 (3), 965-1006.
  • Kang H. S., Kang J. S., Kim J. W. Lee S. Y. 2004. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films, Journal of Appied Phyiscs, 95 (3), 1246-1250.
  • Kazazis S. A., Papadomanolaki E., Androulidaki M., Tsagaraki K., Kostopoulos A., Aperathitis E., Iliopoulos E. 2016. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates, Thin Solid Films, 611, 46-51.
  • Li G., Wang W., Yang W., Wang H. 2015 Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices, Surface Science Reports, 70 (3), 380-423.
  • Liu L., Zhang Y., Yin Y. 2017. High quality (In) GaN films on homoepitaxial substrates, Superlattices and Microstructures, 102, 166-172.
  • Medjdoub F. (Ed.) 2017. Gallium nitride (GaN): physics, devices, and technology, CRC Press. John Wiley & Sons.
  • Morkoç H. 2009. Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth, John Wiley & Sons, 1
  • Mottier P. 2010. LED for lighting applications, John Wiley & Sons, 134.
  • Özen S., Şenay V., Pat S., Korkmaz Ş. 2016. The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc, Scanning, 38 (1), 14-20.
  • Pearton S. J. 2013. Processing of' Wide Band Gap Semiconductors, Cambridge University Press.
  • Pat S., Korkmaz Ş., Özen, S., Şenay V. 2015. GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA), Materials Chemistry and Physics, 159, 1-5.
  • Raposo M., Ferreira Q., Ribeiro P. A. 2007. A guide for atomic force microscopy analysis of soft-condensed matter, Modern Research and Educational Topics in Microscopy, 1, 758-769.
  • Shen K. C., Wang T. Y., Wuu D. S., Horng R. H. 2012. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target, Optics Express, 20 (14), 15149-15156
  • Stenzel O. 2005. The physics of thin film optical spectra, Springer-Verlag Berlin Heidelberg.
  • Sze S. M. 1981. Physics of Semiconductor Devices, 2nd ed. Wiley New York.
  • Tauc J., Menth A. 1972. States in the gap, Journal of Non-crystalline Solids, 8, 569-585.
  • Thaler G. T., Koleske D. D., Lee S. R., Bogart K. H. A., Crawford M. H. 2010. Thermal stability of thin InGaN films on GaN, Journal of Crystal Growth, 312 (11), 1817-1822.
  • Wang T. Y., Ou S. L., Shen K. C., Wuu D. S. 2013. Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition, Optics Express, 21 (6), 7337-7342.
  • Wickenden A. E., Wickenden D. K., Kistenmacher T. J. 1994. The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition, Journal of Applied Physics, 75 (10), 5367-5371.
  • Yang P. F., Jian S. R., Lai Y. S., Yang C. S., Chen R. S. 2008. Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD, Journal of Alloys and Compounds, 463 (1-2), 533-538.

The Effects of Increasing Annealing Temperature on Some Physical Properties of a Glass/GaN/InGaN Film produced with TVA

Yıl 2020, Cilt: 13 Sayı: 1, 1 - 10, 20.03.2020
https://doi.org/10.18185/erzifbed.541448

Öz

In this
study, GaN/InGaN semiconductor films were deposited on glass substrate using
thermionic vacuum arc (TVA) method. In order to improve some physical
properties of the produced films, thermal annealing was performed at different
temperatures and the effect of annealing temperature on the optical and surface
properties of the films was investigated. Transmittance and absorption spectra
were taken using a UV-VIS spectrophotometer and optical band gap energies were
determined. The surface images and surface roughness values of the films were
obtained using atomic force microscopy (AFM). According to the results
obtained, some physical properties of GaN/InGaN films were improved by thermal
annealing and these films were investigated for use in various technological
fields.

Kaynakça

  • Ambacher O. 1998. Growth and applications of group III-nitrides, Journal of Physics D:Applied Physics, 31 (20), 2653-2710.
  • Chambouleyron I., Martínez J. M. 2002. Optical properties of dielectric and semiconductor thin films, In Handbook of Thin Films, 3, 593-622.
  • Chaudhari G. N., Chinchamalatpure V. R., Ghosh S. A. 2011. Structural and electrical characterization of GaN thin films on Si (100), American Journal of Analytical Chemistry, 2 (08), 984.
  • Edward T. Y. 2002. III-V nitride semiconductors: Applications and devices, CRC Press, 16
  • Erdoğan E., Kundakçı M. 2019a. Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method, Microelectronic Engineering, 207, 15-18.
  • Erdoğan E., Kundakçı M. 2019b. Changes of the Physical Properties of Sputtered InGaN Thin Films Under Small Nitrogen Gas Flow Variations, Journal of Electronic Materials, 1-8. (https://doi.org/10.1007/s11664-019-07042-8)
  • Erdoğan E., Kundakçı M. 2019c. Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA), SN Applied Sciences, 1 (1), 1-9
  • Erdoğan E., Kundakci M. Mantarci A. 2016. InGaN thin film deposition on Si (100) and glass substrates by termionic vacuum arc, Journal of Physiscs: Conference Series, 707, 012019.
  • Feng S. W., Tang T. Y., Lu Y. C., Liu S. J., Lin E. C., Yang C. C., Lin J. Y. 2004. Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing, Journal of Applied Physics, 95 (10), 5388-5396.
  • Feng S. W., Lin E. C., Tang T. Y., Cheng Y. C., Wang H. C., Yang C. C., Lin J. Y. 2003. Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31, Applied Physics Letters, 83 (19), 3906-3908.
  • Jain S. C., Willander M., Narayan J., Overstraeten R. V. 2000. III–nitrides: Growth, characterization, and properties, Journal of Applied Physics, 87 (3), 965-1006.
  • Kang H. S., Kang J. S., Kim J. W. Lee S. Y. 2004. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films, Journal of Appied Phyiscs, 95 (3), 1246-1250.
  • Kazazis S. A., Papadomanolaki E., Androulidaki M., Tsagaraki K., Kostopoulos A., Aperathitis E., Iliopoulos E. 2016. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates, Thin Solid Films, 611, 46-51.
  • Li G., Wang W., Yang W., Wang H. 2015 Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices, Surface Science Reports, 70 (3), 380-423.
  • Liu L., Zhang Y., Yin Y. 2017. High quality (In) GaN films on homoepitaxial substrates, Superlattices and Microstructures, 102, 166-172.
  • Medjdoub F. (Ed.) 2017. Gallium nitride (GaN): physics, devices, and technology, CRC Press. John Wiley & Sons.
  • Morkoç H. 2009. Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth, John Wiley & Sons, 1
  • Mottier P. 2010. LED for lighting applications, John Wiley & Sons, 134.
  • Özen S., Şenay V., Pat S., Korkmaz Ş. 2016. The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc, Scanning, 38 (1), 14-20.
  • Pearton S. J. 2013. Processing of' Wide Band Gap Semiconductors, Cambridge University Press.
  • Pat S., Korkmaz Ş., Özen, S., Şenay V. 2015. GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA), Materials Chemistry and Physics, 159, 1-5.
  • Raposo M., Ferreira Q., Ribeiro P. A. 2007. A guide for atomic force microscopy analysis of soft-condensed matter, Modern Research and Educational Topics in Microscopy, 1, 758-769.
  • Shen K. C., Wang T. Y., Wuu D. S., Horng R. H. 2012. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target, Optics Express, 20 (14), 15149-15156
  • Stenzel O. 2005. The physics of thin film optical spectra, Springer-Verlag Berlin Heidelberg.
  • Sze S. M. 1981. Physics of Semiconductor Devices, 2nd ed. Wiley New York.
  • Tauc J., Menth A. 1972. States in the gap, Journal of Non-crystalline Solids, 8, 569-585.
  • Thaler G. T., Koleske D. D., Lee S. R., Bogart K. H. A., Crawford M. H. 2010. Thermal stability of thin InGaN films on GaN, Journal of Crystal Growth, 312 (11), 1817-1822.
  • Wang T. Y., Ou S. L., Shen K. C., Wuu D. S. 2013. Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition, Optics Express, 21 (6), 7337-7342.
  • Wickenden A. E., Wickenden D. K., Kistenmacher T. J. 1994. The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition, Journal of Applied Physics, 75 (10), 5367-5371.
  • Yang P. F., Jian S. R., Lai Y. S., Yang C. S., Chen R. S. 2008. Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD, Journal of Alloys and Compounds, 463 (1-2), 533-538.
Toplam 30 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Konular Mühendislik
Bölüm Makaleler
Yazarlar

Erman Erdoğan 0000-0003-2566-3284

Yayımlanma Tarihi 20 Mart 2020
Yayımlandığı Sayı Yıl 2020 Cilt: 13 Sayı: 1

Kaynak Göster

APA Erdoğan, E. (2020). TVA ile üretilen Cam / GaN / InGaN Filmin Artan Tavlama Sıcaklığının Bazı Fiziksel Özelliklerine Etkileri. Erzincan University Journal of Science and Technology, 13(1), 1-10. https://doi.org/10.18185/erzifbed.541448