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Ag/pentasen/Cu MIM Yapısının Optoelektronik Özelliklerinin İncelenmesi

Year 2023, Volume: 13 Issue: 4, 1798 - 1806, 15.12.2023

Fatih Ünal

https://doi.org/10.31466/kfbd.1336879

Abstract

Ag/pentasen/Cu MIM yapısı (metal-insulator-metal) termal buharlaştırma yöntemi kullanılarak başarılı bir şekilde üretilmiştir. Üretilen yapının temel I-V karakterizasyonu karanlık ve 20, 40, 60, 80, 100 mW.cm-2 ışık şiddetinde incelenmiştir. MIM yapısının diyot parametreleri; idealite faktörü (n), engel yüksekliği (ϕb), ters doyma akımı (I0), seri direnç (Rs) ve Shunt direnç (Rsh) değerleri hem karanlık hem de farklı ışık şiddetlerinde belirlenmiştir. Karanlık ortamda sırasıyla n, ϕb, I0, Rs ve Rsh değerleri 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω ile 3.85 x104 Ω olduğu belirlenmiştir. Ayrıca üretilen MIM yapısının fotodedektör parametreleri; fotoakım (Iph), duyarlılık (R) ve özgül dedektiflik (D*) değerleri de farklı ışık şiddetlerinde incelenmiştir ve maksimum değerlerin sırasıyla 7.85x10-5 A, 6.09x10-3 A.W-1 ve 1.86x107 Jones olduğu belirlenmiştir.

Keywords

Metal-insulator-metal MIM pentasen optoelektronik

References

  • Aktas, S., Ünal, F., Kurt, M. S., Koç, M. M., Arslan, T., Aslan, N., & Coşkun, B. (2023). Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity. Physica Scripta. Retrieved from http://iopscience.iop.org/article/10.1088/1402-4896/aceb41
  • Çakar, M., & Türüt, A. (2003). The conductance and capacitance-frequency characteristics of the organic compound (pyronine-B)/p-Si structures. Synthetic Metals, 138(3), 549-554. doi:10.1016/S0379-6779(02)01249-3
  • Çaldıran, Z., Şinoforoğlu, M., Metin, Ö., Aydoğan, Ş., & Meral, K. (2015). Space charge limited current mechanism (SCLC) in the graphene oxide–Fe3O4 nanocomposites/n-Si heterojunctions. Journal of Alloys and Compounds, 631, 261-265. doi:https://doi.org/10.1016/j.jallcom.2015.01.117
  • Goykhman, I., Desiatov, B., Khurgin, J., Shappir, J., & Levy, U. (2011). Locally oxidized silicon surface-plasmon Schottky detector for telecom regime. Nano Letters, 11(6), 2219-2224.
  • Gundlach, D., Kuo, C.-C., Nelson, S., & Jackson, T. (1999). Organic thin film transistors with field effect mobility> 2 cm/sup 2//Vs. Paper presented at the 1999 57th Annual Device Research Conference Digest (Cat. No. 99TH8393).
  • Gündüz, B., Turan, N., Kaya, E., & Çolak, N. (2013). The photo-electrical properties of the p-Si/Fe(II)–polymeric complex/Au diode. Synthetic Metals, 184, 73-82. doi:https://doi.org/10.1016/j.synthmet.2013.10.002
  • Kaur, D., & Kumar, M. (2021). A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects. Advanced optical materials, 9(9), 2002160.
  • Kim, S., Choi, Y., Kim, K., Kim, J., & Im, S. (2003). Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties. Applied Physics Letters, 82(4), 639-641.
  • Lee, J., Hwang, D. K., Park, C. H., Kim, S. S., & Im, S. (2004). Pentacene-based photodiode with Schottky junction. Thin Solid Films, 451-452, 12-15. doi:https://doi.org/10.1016/j.tsf.2003.10.086
  • Lin, K.-T., Chen, H.-L., Lai, Y.-S., & Yu, C.-C. (2014). Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths. Nature Communications, 5(1), 3288.
  • Mahmoud, S. A., Ibrahim, A. A., & Riad, A. S. (2000). Physical properties of thermal coating CdS thin films using a modified evaporation source. Thin Solid Films, 372(1), 144-148. doi:https://doi.org/10.1016/S0040-6090(00)01053-1
  • Missoni, L. L., Ortiz, G. P., & Martínez Ricci, M. L. (2023). Understanding the coupling between MIM cavities due to single and double Tamm plasmon polaritons. Optical Materials: X, 20, 100273.
  • Patel, A., Pataniya, P., Solanki, G. K., Sumesh, C. K., Patel, K. D., & Pathak, V. M. (2019). Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode. Superlattices and Microstructures, 130, 160-167. doi:https://doi.org/10.1016/j.spmi.2019.04.032
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  • Scales, C., & Berini, P. (2010). Thin-film Schottky barrier photodetector models. IEEE Journal of Quantum Electronics, 46(5), 633-643.
  • Siddik, A., Haldar, P. K., Das, U., Roy, A., & Sarkar, P. K. (2023). Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application. Materials Chemistry and Physics, 297, 127292.
  • Sze, S. M., Li, Y., & Ng, K. K. (2021). Physics of semiconductor devices: John wiley & sons.
  • Unal, F. (2023). Production of coronene/2–3% Al:CdO nanocomposite heterojunctions by hybrid methods and comparison of optoelectronic properties. Journal of Materials Science: Materials in Electronics, 34(4), 279. doi:10.1007/s10854-022-09745-x
  • Ünal, F. (2021). DETERMINATION OF THE STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISTICS OF InSe/RUBRENE, CIS/RUBRENE, CIGS/RUBRENE, InSe/CORONENE, CIS/CORONENE, CIGS/CORONENE HETEROJOINTS GROWTH ON ITO GLASS. (Doctoral). Inonu University, Turkey.
  • Xu, Z., Zhang, L., He, H., Wang, J., & Xie, M. (2011). Growth of GaN on Si (111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions. Journal of Applied Physics, 110(9), 093514.
  • Zhang, C., Wu, K., Zhan, Y., Giannini, V., & Li, X. (2016). Planar microcavity-integrated hot-electron photodetector. Nanoscale, 8(19), 10323-10329. doi:10.1039/C6NR01822J
  • Zhang, X., Zhang, X., Wang, L., Wu, Y., Wang, Y., Gao, P., . . . Jie, J. (2013). ZnSe nanowire/Si p-n heterojunctions: Device construction and optoelectronic applications. Nanotechnology, 24(39). doi:10.1088/0957-4484/24/39/395201
  • Zurnacı, M., Ünal, F., Demir, S., Gür, M., Şener, N., & Şener, İ. (2021). Synthesis of a new 1,3,4-thiadiazole-substituted phenanthroimidazole derivative, its growth on glass/ITO as a thin film and analysis of some surface and optoelectronic properties. New Journal of Chemistry, 45(48), 22678-22690. doi:10.1039/D1NJ04375G

Investigation of Optoelectronic Properties of Ag/Pentacene/Cu MIM Structure

Year 2023, Volume: 13 Issue: 4, 1798 - 1806, 15.12.2023

Fatih Ünal

https://doi.org/10.31466/kfbd.1336879

Abstract

Ag/pentacene/Cu MIM structure (metal-insulator-metal) was successfully produced using thermal evaporation method. The basic I-V characterization of the produced structure was investigated at dark and 20, 40, 60, 80, 100 mW.cm-2 light intensity. Diode parameters of MIM structure; the ideality factor (n), barrier height (ϕb), reverse saturation current (I0), series resistance (Rs) and Shunt resistance (Rsh) values were determined at both dark and different light intensities. In dark environment, n, ϕb, I0, Rs and Rsh values were determined as 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω and 3.85 x104 Ω, respectively. In addition, the photodetector parameters of the produced MIM structure; photocurrent (Iph), sensitivity (R) and specific detective (D*) values were also investigated at different light intensities and the maximum values were determined to be 7.85x10-5 A, 6.09x10-3 A.W-1 and 1.86x107 Jones, respectively.

Keywords

Metal-insulator-metal MIM pentacene optoelectronic

References

  • Aktas, S., Ünal, F., Kurt, M. S., Koç, M. M., Arslan, T., Aslan, N., & Coşkun, B. (2023). Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity. Physica Scripta. Retrieved from http://iopscience.iop.org/article/10.1088/1402-4896/aceb41
  • Çakar, M., & Türüt, A. (2003). The conductance and capacitance-frequency characteristics of the organic compound (pyronine-B)/p-Si structures. Synthetic Metals, 138(3), 549-554. doi:10.1016/S0379-6779(02)01249-3
  • Çaldıran, Z., Şinoforoğlu, M., Metin, Ö., Aydoğan, Ş., & Meral, K. (2015). Space charge limited current mechanism (SCLC) in the graphene oxide–Fe3O4 nanocomposites/n-Si heterojunctions. Journal of Alloys and Compounds, 631, 261-265. doi:https://doi.org/10.1016/j.jallcom.2015.01.117
  • Goykhman, I., Desiatov, B., Khurgin, J., Shappir, J., & Levy, U. (2011). Locally oxidized silicon surface-plasmon Schottky detector for telecom regime. Nano Letters, 11(6), 2219-2224.
  • Gundlach, D., Kuo, C.-C., Nelson, S., & Jackson, T. (1999). Organic thin film transistors with field effect mobility> 2 cm/sup 2//Vs. Paper presented at the 1999 57th Annual Device Research Conference Digest (Cat. No. 99TH8393).
  • Gündüz, B., Turan, N., Kaya, E., & Çolak, N. (2013). The photo-electrical properties of the p-Si/Fe(II)–polymeric complex/Au diode. Synthetic Metals, 184, 73-82. doi:https://doi.org/10.1016/j.synthmet.2013.10.002
  • Kaur, D., & Kumar, M. (2021). A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects. Advanced optical materials, 9(9), 2002160.
  • Kim, S., Choi, Y., Kim, K., Kim, J., & Im, S. (2003). Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties. Applied Physics Letters, 82(4), 639-641.
  • Lee, J., Hwang, D. K., Park, C. H., Kim, S. S., & Im, S. (2004). Pentacene-based photodiode with Schottky junction. Thin Solid Films, 451-452, 12-15. doi:https://doi.org/10.1016/j.tsf.2003.10.086
  • Lin, K.-T., Chen, H.-L., Lai, Y.-S., & Yu, C.-C. (2014). Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths. Nature Communications, 5(1), 3288.
  • Mahmoud, S. A., Ibrahim, A. A., & Riad, A. S. (2000). Physical properties of thermal coating CdS thin films using a modified evaporation source. Thin Solid Films, 372(1), 144-148. doi:https://doi.org/10.1016/S0040-6090(00)01053-1
  • Missoni, L. L., Ortiz, G. P., & Martínez Ricci, M. L. (2023). Understanding the coupling between MIM cavities due to single and double Tamm plasmon polaritons. Optical Materials: X, 20, 100273.
  • Patel, A., Pataniya, P., Solanki, G. K., Sumesh, C. K., Patel, K. D., & Pathak, V. M. (2019). Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode. Superlattices and Microstructures, 130, 160-167. doi:https://doi.org/10.1016/j.spmi.2019.04.032
  • . Photodetectors and Solar Cells. (2006). In Physics of Semiconductor Devices (pp. 663-742).
  • Saron, K. M. A., Hashim, M. R., Naderi, N., & Allam, N. K. (2013). Interface properties determined the performance of thermally grown GaN/Si heterojunction solar cells. Solar Energy, 98, 485-491.
  • Scales, C., & Berini, P. (2010). Thin-film Schottky barrier photodetector models. IEEE Journal of Quantum Electronics, 46(5), 633-643.
  • Siddik, A., Haldar, P. K., Das, U., Roy, A., & Sarkar, P. K. (2023). Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application. Materials Chemistry and Physics, 297, 127292.
  • Sze, S. M., Li, Y., & Ng, K. K. (2021). Physics of semiconductor devices: John wiley & sons.
  • Unal, F. (2023). Production of coronene/2–3% Al:CdO nanocomposite heterojunctions by hybrid methods and comparison of optoelectronic properties. Journal of Materials Science: Materials in Electronics, 34(4), 279. doi:10.1007/s10854-022-09745-x
  • Ünal, F. (2021). DETERMINATION OF THE STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISTICS OF InSe/RUBRENE, CIS/RUBRENE, CIGS/RUBRENE, InSe/CORONENE, CIS/CORONENE, CIGS/CORONENE HETEROJOINTS GROWTH ON ITO GLASS. (Doctoral). Inonu University, Turkey.
  • Xu, Z., Zhang, L., He, H., Wang, J., & Xie, M. (2011). Growth of GaN on Si (111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions. Journal of Applied Physics, 110(9), 093514.
  • Zhang, C., Wu, K., Zhan, Y., Giannini, V., & Li, X. (2016). Planar microcavity-integrated hot-electron photodetector. Nanoscale, 8(19), 10323-10329. doi:10.1039/C6NR01822J
  • Zhang, X., Zhang, X., Wang, L., Wu, Y., Wang, Y., Gao, P., . . . Jie, J. (2013). ZnSe nanowire/Si p-n heterojunctions: Device construction and optoelectronic applications. Nanotechnology, 24(39). doi:10.1088/0957-4484/24/39/395201
  • Zurnacı, M., Ünal, F., Demir, S., Gür, M., Şener, N., & Şener, İ. (2021). Synthesis of a new 1,3,4-thiadiazole-substituted phenanthroimidazole derivative, its growth on glass/ITO as a thin film and analysis of some surface and optoelectronic properties. New Journal of Chemistry, 45(48), 22678-22690. doi:10.1039/D1NJ04375G
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Details

Primary Language Turkish
Subjects Classical Physics (Other)
Journal Section Articles
Authors

Fatih Ünal 0000-0002-6155-7051

Early Pub Date December 18, 2023
Publication Date December 15, 2023
Published in Issue Year 2023 Volume: 13 Issue: 4

Cite

APA Ünal, F. (2023). Ag/pentasen/Cu MIM Yapısının Optoelektronik Özelliklerinin İncelenmesi. Karadeniz Fen Bilimleri Dergisi, 13(4), 1798-1806. https://doi.org/10.31466/kfbd.1336879
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