Research Article
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Year 2019, Volume: 7 Issue: 3, 326 - 331, 30.07.2019
https://doi.org/10.17694/bajece.576303

Abstract

References

  • [1] H. Šamić, S. Makham, "The Influence of Radiation on the Solar Cell Efficiency.pdf (2)," Balkan Journal of Electrical and Computer Engineering, vol. 2, no. 1, 2014, pp. 2-5.
  • [2] N. Ekren, "Researches on Anti-Reflection Coating (ARC) Methods Used in PV Systems," Balkan Journal of Electrical & Computer Engineering, vol. 6, no. 1, 2018, pp.42-46.
  • [3] S. Shin, J. Kim, Y.-H. Kim, S.-I. Kim. "Enhanced performance of organic light-emitting diodes by using hybrid anodes composed of graphene and conducting polymer," Current Applied Physics, vol. 13, no. 2, 2013, pp. 144-147.
  • [4] A. Ugur and M. Yilmaz, "A GaN-Based Synchronous Buck Converter for High Power Laser Diode Drive Applications," Balkan Journal of Electrical & Computer Engineering, vol. 6, no. 1, 2018, pp. 62-68.
  • [5] T. Knežević, X. Liu, E. Hardeveld, T. Suligoj and L. K. Nanver, "Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes," IEEE Electron Device Letters, vol. 40, no. 6, June 2019, pp. 858-861.
  • [6] Y. Lan et al., "Flexible Graphene Field-Effect Transistors with Extrinsic fmax of 28 GHz," IEEE Electron Device Letters, vol. 39, no. 12, Dec. 2018, pp. 1944-1947.
  • [7] S. O. Tan, H. Uslu Tecimer, O. Çiçek, H. Tecimer, İ. Orak and Ş. Altındal, "Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities," Journal of Material Science: Material Electron, vol. 27, no. 8, 2016, pp. 8340-8347.
  • [8] O. Çiçek, H. Uslu Tecimer, S. Tan, H. Tecimer, Ş. Altındal and I. Uslu, “Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions,“ Composites Part B, vol. 98, 2016, pp. 260-268.
  • [9] Ü. Özgür, Y. I. Alivov, A. Teke, M. A. Reshchikov, S. Doğan, V. Avruti, S. J. Cho and H. Morkoç, “A comprehensive review of ZnO materials and devices,” Journal of Applied Physics, vol. 98, no. 4, 2005, 041301. [10] F. Z. Pür ve A. Tataroğlu, “Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal-insulator-semiconductor) Schottky diodes using IV characteristics in a wide temperature range,” Physica Scripta, vol. 86, no. 3, 2012.
  • [11] S.K. Cheung and N.W. Cheung, “Extraction of Schottky diode parameters from forward current-voltage characteristics,” Applied Physics Letters, vol. 49, no. 2, 1986, pp. 85-87.
  • [12] H. Norde, “A modified forward I-V plot for Schottky diodes with high series resistance,” Journal of Appied Physics, vol. 50, no. 7, 1979, pp.5052-5053.
  • [13] K. E. Bohlin, “Generalized Norde plot including determination of the ideality factor,” Journal of Applied Physics, vol. 60, 1986.
  • [14] S. M. Sze, “Semiconductor Devices: Physics and Technology,” New Tork: Wiley, 1985.
  • [15] J. Travis and J. King, “LabVIEW for Everyone: Graphical Programming Made Easy and Fun”, 2006.
  • [16] R. Bitter, T. Mohiuddin, and M. Nawrocki, “LabVIEW: Advanced programming techniques”. Crc Press, 2006.
  • [17] LabVIEW applications by 2019 Viewpoint Systems, Inc., Available: https://www.viewpointusa.com/labview/where-is-labview-used-who-uses-it-companies-that-use-it/, [Jun 5, 2019].
  • [18] T. Salmi, M. Bouzguenda, A. Gastli and A. Masmoudi, “MATLAB/Simulink Based Modelling of Solar Photovoltaic Cell,” International Journal of Renewable Energy Research, vol. 2, no. 2, 2012.
  • [19] S. Nema, R.K. Nema and G. Agnihotri, “MATLAB/Simulink based study of photovoltaic cells/modules /array and their experimental verification”, International journal of Energy and Environment, vol. 1, no. 3, 2010.
  • [20] LabVIEW User Manuel, National Instruments, 2003.
  • [21] Ş. Karataş and A. Turut, “The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes,” Physica B, vol. 381, 2006, pp. 199-203.
  • [22] M. Soylu and F. Yakuphanoğlu, “Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell,” Thin Solid Films, vol. 519, 2011, pp. 1950-1954.
  • [23] A. Bobby, N. Shiwakoti, P. S. Gupta and B. K. Antony, “Barrier modification of Au/n-GaAs Schottky structure by organic interlayer,” Indian Journal of Physics, vol. 90, no. 3, 2006, pp.307-312.

LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures

Year 2019, Volume: 7 Issue: 3, 326 - 331, 30.07.2019
https://doi.org/10.17694/bajece.576303

Abstract

LabVIEW is a software development platform
that can be programmed with a graphical interface and so, measurement and
instrumentation problems are used to deliver a solution. In the sensor
applications, it is very important to calculate the main electronic parameters
of the produced samples and it takes a lot of time to calculate these
parameters and evaluate results. Therefore, LabVIEW based a software system was
developed to minimize the time spent. In this way, it was used to make the
analysis as fast as possible. This study aimed to calculate quickly the
obtained results from the measurement system. For this purpose, AuPd/n-GaAs
Schottky Junction Structure (SJS) was produced by using RF and DC sputtering
techniques to investigate on electronic parameters of SJS. The forward and
reverse current-voltage (I-V) of SJS at ±3V were measured at room temperature
(295 K). By using thermionic emission (TE) theory, Ohm’s law, Cheung and
Cheung’s function and modified Norde’s function, the electronics parameters
such as the series resistance (Rs), the shunt resistance (Rsh),
the barrier height (ΦB0) and the ideality factor (n) were calculated
and graphics, which were drawn according to these models, via the developed software
platform.

References

  • [1] H. Šamić, S. Makham, "The Influence of Radiation on the Solar Cell Efficiency.pdf (2)," Balkan Journal of Electrical and Computer Engineering, vol. 2, no. 1, 2014, pp. 2-5.
  • [2] N. Ekren, "Researches on Anti-Reflection Coating (ARC) Methods Used in PV Systems," Balkan Journal of Electrical & Computer Engineering, vol. 6, no. 1, 2018, pp.42-46.
  • [3] S. Shin, J. Kim, Y.-H. Kim, S.-I. Kim. "Enhanced performance of organic light-emitting diodes by using hybrid anodes composed of graphene and conducting polymer," Current Applied Physics, vol. 13, no. 2, 2013, pp. 144-147.
  • [4] A. Ugur and M. Yilmaz, "A GaN-Based Synchronous Buck Converter for High Power Laser Diode Drive Applications," Balkan Journal of Electrical & Computer Engineering, vol. 6, no. 1, 2018, pp. 62-68.
  • [5] T. Knežević, X. Liu, E. Hardeveld, T. Suligoj and L. K. Nanver, "Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes," IEEE Electron Device Letters, vol. 40, no. 6, June 2019, pp. 858-861.
  • [6] Y. Lan et al., "Flexible Graphene Field-Effect Transistors with Extrinsic fmax of 28 GHz," IEEE Electron Device Letters, vol. 39, no. 12, Dec. 2018, pp. 1944-1947.
  • [7] S. O. Tan, H. Uslu Tecimer, O. Çiçek, H. Tecimer, İ. Orak and Ş. Altındal, "Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities," Journal of Material Science: Material Electron, vol. 27, no. 8, 2016, pp. 8340-8347.
  • [8] O. Çiçek, H. Uslu Tecimer, S. Tan, H. Tecimer, Ş. Altındal and I. Uslu, “Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions,“ Composites Part B, vol. 98, 2016, pp. 260-268.
  • [9] Ü. Özgür, Y. I. Alivov, A. Teke, M. A. Reshchikov, S. Doğan, V. Avruti, S. J. Cho and H. Morkoç, “A comprehensive review of ZnO materials and devices,” Journal of Applied Physics, vol. 98, no. 4, 2005, 041301. [10] F. Z. Pür ve A. Tataroğlu, “Analysis of the series resistance and interface states of Au/Si3N4/n-Si (metal-insulator-semiconductor) Schottky diodes using IV characteristics in a wide temperature range,” Physica Scripta, vol. 86, no. 3, 2012.
  • [11] S.K. Cheung and N.W. Cheung, “Extraction of Schottky diode parameters from forward current-voltage characteristics,” Applied Physics Letters, vol. 49, no. 2, 1986, pp. 85-87.
  • [12] H. Norde, “A modified forward I-V plot for Schottky diodes with high series resistance,” Journal of Appied Physics, vol. 50, no. 7, 1979, pp.5052-5053.
  • [13] K. E. Bohlin, “Generalized Norde plot including determination of the ideality factor,” Journal of Applied Physics, vol. 60, 1986.
  • [14] S. M. Sze, “Semiconductor Devices: Physics and Technology,” New Tork: Wiley, 1985.
  • [15] J. Travis and J. King, “LabVIEW for Everyone: Graphical Programming Made Easy and Fun”, 2006.
  • [16] R. Bitter, T. Mohiuddin, and M. Nawrocki, “LabVIEW: Advanced programming techniques”. Crc Press, 2006.
  • [17] LabVIEW applications by 2019 Viewpoint Systems, Inc., Available: https://www.viewpointusa.com/labview/where-is-labview-used-who-uses-it-companies-that-use-it/, [Jun 5, 2019].
  • [18] T. Salmi, M. Bouzguenda, A. Gastli and A. Masmoudi, “MATLAB/Simulink Based Modelling of Solar Photovoltaic Cell,” International Journal of Renewable Energy Research, vol. 2, no. 2, 2012.
  • [19] S. Nema, R.K. Nema and G. Agnihotri, “MATLAB/Simulink based study of photovoltaic cells/modules /array and their experimental verification”, International journal of Energy and Environment, vol. 1, no. 3, 2010.
  • [20] LabVIEW User Manuel, National Instruments, 2003.
  • [21] Ş. Karataş and A. Turut, “The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes,” Physica B, vol. 381, 2006, pp. 199-203.
  • [22] M. Soylu and F. Yakuphanoğlu, “Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell,” Thin Solid Films, vol. 519, 2011, pp. 1950-1954.
  • [23] A. Bobby, N. Shiwakoti, P. S. Gupta and B. K. Antony, “Barrier modification of Au/n-GaAs Schottky structure by organic interlayer,” Indian Journal of Physics, vol. 90, no. 3, 2006, pp.307-312.
There are 22 citations in total.

Details

Primary Language English
Subjects Electrical Engineering
Journal Section Araştırma Articlessi
Authors

Osman Çiçek 0000-0002-2765-4165

Sedat Kurnaz 0000-0003-3657-2628

Publication Date July 30, 2019
Published in Issue Year 2019 Volume: 7 Issue: 3

Cite

APA Çiçek, O., & Kurnaz, S. (2019). LabVIEW Based a Software System: Quantitative Determination of Main Electronic Parameters for Schottky Junction Structures. Balkan Journal of Electrical and Computer Engineering, 7(3), 326-331. https://doi.org/10.17694/bajece.576303

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